The H21A1 consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an “ON” to an “OFF” state.

Technical Specification:

• Configuration: Photointerupter
• Peak Wavelength: 40 nm
• Gap Width: 3 mm
• Power Dissipation: 150 mW
• Maximum Collector Emitter Voltage: 30 V
• Maximum Emitter Collector Voltage: 5 V
• Maximum Collector Current: 20 mA
• Input Voltage: 1.2
• Maximum Forward Current: 50 mA
• Maximum Rise Time: 8 us
• Maximum Fall Time: 50 us
• Size: 24.7mm*6.35mm (L*W)

Features:

• Opaque housing
• Low cost
• .035” apertures
• High IC(ON)

Applications:

• Record players
• Optoelectronic switches
• Copier
• Printers